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3.5GHz GaN HEMT for Mobile Communication Base Transceiver Station (BTS)

3.5GHz GaN HEMT for Mobile Communication Base Transceiver Station (BTS)

Corresponding of various needs in a micro-cell BTS

  • Achieve high drain efficiency* of 67% by GaN-HEMT and transistor optimization
  • High efficiency allows use of simple cooling system, which contributes to smaller size and lower power consumption of BTS
Mitsubishi

Description

Addcom Solution Pte Ltd